利用者:加藤勝憲/半導体製造工場一覧
< 利用者:加藤勝憲
これは半導体製造工場のリストである。半導体製造工場は、マイクロチップとも呼ばれる集積回路（IC）を製造する場所である。
これらのファウンドリは、自社でICを設計・製造し、設計のみ（ファブレス企業）の設計も製造する垂直統合型デバイスメーカー（IDM）によって運営されているか、ファブレス企業の設計を製造し、自社でICを設計しない純粋なファウンドリによって運営されている。
TSMCのようにIC設計サービスを提供するピュアプレイ・ファウンドリーもあれば、サムスン電子のように顧客のためにICを設計・製造する一方、自社でICを設計・製造・販売するファウンドリーもある。
用語集
[編集]- Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
- Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
- Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
- Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
- Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.
公開されている製造工場
[編集]稼働中の工場には次のものが含まれる。
Number of closed fabs currently listed here: 45
| Company | Plant name | Plant location | Plant cost (in US$ billions) | Started production | Wafer size (mm) | Process technology node (nm) | Production capacity (Wafers/Month) | Technology / products |
|---|---|---|---|---|---|---|---|---|
| UMC – He Jian | Fab 8N | China, Suzhou |
0.750,[1] 1.2, +0.5 | 2003, May[1] | 200 | 4000–1000, 500, 350, 250, 180, 110 | 77,000 | Foundry |
| UMC | Fab 6A | Taiwan, Hsinchu |
0.35[1] | 1989[1] | 150 | 450 | 31,000 | Foundry |
| UMC | Fab 8AB | Taiwan, Hsinchu |
1[1] | 1995[1] | 200 | 250 | 67,000[2] | Foundry |
| UMC | Fab 8C | Taiwan, Hsinchu |
1[1] | 1998[1] | 200 | 350–110 | 37,000 | Foundry |
| UMC | Fab 8D | Taiwan, Hsinchu |
1.5[1] | 2000[1] | 200 | 90 | 31,000 | Foundry |
| UMC | Fab 8E | Taiwan, Hsinchu |
0.96[1] | 1998[1] | 200 | 180 | 37,000 | Foundry |
| UMC | Fab 8F | Taiwan, Hsinchu |
1.5[1] | 2000[1] | 200 | 150 | 40,000 | Foundry |
| UMC | Fab 8S | Taiwan, Hsinchu |
0.8[1] | 2004[1] | 200 | 350–250 | 31,000 | Foundry |
| UMC | Fab 12A | Taiwan, Tainan |
4.65, 4.1, 6.6, 7.3[1] | 2001, 2010, 2014, 2017[1] | 300 | 28, 14 | 87,000[2] | Foundry |
| UMC | Fab 12i | Singapore | 3.7[1] | 2004[1] | 300 | 130–40 | 53,000 | Foundry |
| UMC – United Semiconductor | Fab 12X | China, Xiamen |
6.2 | 2016 | 300 | 55–28 | 19,000-25,000 (2021) | Foundry |
| UMC – USJC (formerly MIFS) (formerly Fujitsu) | Fab 12M (original Fujitsu installations)[3] | Japan, Mie Prefecture |
1974 | 150, 200, 300[4] | 90–40 | 33,000 | Foundry | |
| Texas Instruments | Miho | Japan, Ibaraki, Miho |
200 | 350, 250[5] | 40,000[6] | Analog, DLP[7] | ||
| Texas Instruments (formerly Spansion) | Aizu[8] | Japan, Fukushima, Aizuwakamatsu |
200 | Analog | ||||
| Texas Instruments (formerly National Semiconductor) | MFAB[9] | United States, Maine, South Portland |
0.932 | 1997 | 200 | 350, 250, 180 | Analog | |
| Texas Instruments (formerly Micron) (formerly IM Flash) | LFAB | United States, Utah, Lehi |
1.3[10] (+ 3–4, future)[11] | 300 | 65–45 | 70,000 | Analog, mixed signal, logic
NAND FLASH (former), 3D XPoint (former) | |
| Texas Instruments | RFAB1[12] | United States, Texas, Richardson |
2009 | 300 | 250, 180 | 20,000[13] | Analog | |
| Texas Instruments | RFAB2 | United States, Texas, Richardson |
2022 | 300 | Analog | |||
| Texas Instruments | DMOS5 | United States, Texas, Dallas |
1984 | 200 | 250, 180 | Analog, DLP | ||
| Texas Instruments | DMOS6 | United States, Texas, Dallas |
2000 | 300 | 130–45 | 22,000[14] | Logic, Analog | |
| Texas Instruments | DFAB | United States, Texas, Dallas |
1966 | 150, 200 | Mixed Signal, Analog | |||
| Texas Instruments | SFAB | United States, Texas, Sherman |
1965 | 150 | Analog | |||
| Texas Instruments | FFAB | Germany, Bavaria, Freising |
200 | 1000, 180 | 37,500 (450,000 per year)[15] | Analog | ||
| Texas Instruments (formerly SMIC – Cension) | CFAB | China, Chengdu |
200 | 30,000[16] | Analog | |||
| Tsinghua Unigroup[17] | China, Nanjing |
10 (first phase), 30 | Planned | 300 | 100,000 (first phase) | 3D NAND | ||
| Tsinghua Unigroup – XMC (formerly Xinxin)[18] | Fab 1 | China, Wuhan[1] |
1.9 | 2008 | 300 | 90, 65, 60, 50, 45, 40, 32 | 30,000[19] | Foundry, NOR |
| Tsinghua Unigroup – Yangtze Memory Technologies (YMTC) – XMC (formerly Xinxin)[18][19][17] | Fab 2 | China, Wuhan |
24 | 2018[1] | 300 | 20 | 200,000 | 3D NAND |
| ChangXin Memory – (formerly Innotron Memory) | Fab 1[20] | China, Hefei |
8[21] | 2019[22] | 300 | 19 | 20,000–40,000 | DRAM |
| SMIC | S1 Mega Fab (S1A/S1B/S1C)[23] | China, Shanghai |
200 | 350–90 | 115,000[24] | Foundry | ||
| SMIC | S2 (Fab 8)[23] | China, Shanghai |
300 | 45/40–32/28 | 20,000 | Foundry | ||
| SMIC – SMSC | SN1[23] | China, Shanghai |
10 | 2020[25] | 300 | 14 | 70,000[25] | Foundry |
| SMIC | B1 Mega Fab (Fab 4, Fab 6)[23] | China, Beijing |
2004 | 300 | 180–90/55 | 52,000 | Foundry | |
| SMIC | B2A[23] | China, Beijing |
3.59[26] | 2014 | 300 | 45/40–32/28 | 41,000 | Foundry |
| SMIC | Fab 15[23] | China, Shenzhen |
2014 | 200 | 350–90 | 55,000 | Foundry | |
| SMIC | Fab 7[23] | China, Tianjin |
2004 | 200 | 350–90 | 60,000[27] | Foundry | |
| SMIC | Jingcheng | China, Beijing |
7.7[28] | Template:Tba | 300 | 28 | 100,000 | Foundry |
| SMIC | Lingang | China, Shanghai |
8.87[29] | Template:Tba | 300 | 28 | 100,000 | Foundry |
| SMIC | Shenzhen | China, Shenzhen |
2.35[30] | Template:Tba | 300 | 28 | 40,000 | Foundry |
| SMIC | Xiqing | China, Tianjin |
7.5[31] | Template:Tba | 300 | 28 | 100,000 | Foundry |
| Wuxi Xichanweixin (formerly SMIC – LFoundry) (formerly LFoundry) (formerly Micron)[32] (formerly Texas Instruments) | LF | Italy, Abruzzo, Avezzano |
1995 | 200 | 180–90 | 40,000 | ||
| Nanya | Fab 2 | Taiwan, Linkou |
0.8 | 2000 | 200[33] | 175 | 30,000 | DRAM |
| Nanya | Fab 3A[34] | Taiwan, New Taipei City[35] |
1.85[36] | 2018 | 300 | 70-20 | 34,000[37] | DRAM |
| Nanya | Taiwan, New Taipei City[38] |
10.66 | Template:Tba | 300 | 10 | 15,000–45,000 | DRAM | |
| MESA+ Institute | NANOLAB | Netherlands, Enschede |
Academic research, R&D activities, pilot production for MEMS, Photonics, Microfluidics | |||||
| Micron | Fab 4[39] | United States, Idaho, Boise |
300 | R&D | ||||
| Micron (formerly Dominion Semiconductor) | Fab 6 | United States, Virginia, Manassas |
1997 | 300 | 25 | 70,000 | DRAM, NAND FLASH, NOR | |
| Micron (formerly TECH Semiconductor) | Fab 7 (formerly TECH Semiconductor, Singapore)[40] | Singapore | 300 | 60,000 | NAND FLASH | |||
| Micron (formerly IM Flash)[41] | Fab 10[42] | Singapore | 3 | 2011 | 300 | 25 | 140,000[43] | NAND FLASH |
| Micron (formerly Inotera) | Fab 11[44] | Taiwan, Taoyuan |
300 | 20 and under | 125,000[45] | DRAM | ||
| Micron | Fab 13[46] | Singapore | 200 | NOR | ||||
| Micron | Singapore[47] | 200 | NOR Flash | |||||
| Micron | Micron Semiconductor Asia | Singapore[47] | ||||||
| Micron | China, Xi'an[47] |
|||||||
| Micron (formerly Elpida Memory) | Fab 15 (formerly Elpida Memory, Hiroshima)[39][47] | Japan, Hiroshima |
300 | 20 and under | 100,000 | DRAM | ||
| Micron (formerly Rexchip) | Fab 16 (formerly Rexchip, Taichung)[39] | Taiwan, Taichung |
300 | 30 and under | 80,000 | DRAM, FEOL | ||
| Micron (formerly Cando) | Micron Memory Taiwan[47] | Taiwan, Taichung |
?, 2018 | 300 | DRAM, BEOL | |||
| Micron | A3 | Taiwan, Taichung[48] |
Template:Tba | 300 | DRAM | |||
| Intel | D1B | United States, Oregon, Hillsboro |
1996 | 300 | 22, 14, 10 | Microprocessors[49] | ||
| Intel | D1C[50][49] | United States, Oregon, Hillsboro |
2001 | 300 | 22, 14, 10 | Microprocessors[49] | ||
| Intel | D1D[50][49] | United States, Oregon, Hillsboro |
2003 | 300 | 14, 10, 7 | Microprocessors[49] | ||
| Intel | D1X[51][49] | United States, Oregon, Hillsboro |
2013 | 300 | 14, 10, 7 | Microprocessors[49] | ||
| Intel | Fab 12[50][49] | United States, Arizona, Chandler |
1996 | 300 | 65, 22, 14 | Microprocessors & chipsets[49] | ||
| Intel | Fab 32[50][52] | United States, Arizona, Chandler |
3 | 2007 | 300 | 45 | ||
| Intel | Fab 32[50][49] | United States, Arizona, Chandler |
2007 | 300 | 32, 22 | Microprocessors[49] | ||
| Intel | Fab 42[53][54][49] | United States, Arizona, Chandler |
10[55] | 2020[56] | 300 | 10, 7 | Microprocessors[49] | |
| Intel | Fab 52, 62[57][58] | United States, Arizona, Chandler |
20[57] | 2024[57] | Microprocessors[57] | |||
| Intel | Fab 11x[50][49] | United States, New Mexico, Rio Rancho |
2002 | 300 | 45, 32 | Microprocessors[49] | ||
| Intel (formerly Micron) (formerly Numonyx) (formerly Intel) | Fab 18[59] | Israel, Southern District, Kiryat Gat |
1996 | 200, 300 | 180, 90, 65, 45 | Microprocessors and chipsets,[60] NOR flash | ||
| Intel | Fab 10[50] | Ireland, County Kildare, Leixlip |
1994 | 300 | ||||
| Intel | Fab 14[50] | Ireland, County Kildare, Leixlip |
1998 | 300 | ||||
| Intel | Fab 24[50][49] | Ireland, County Kildare, Leixlip |
2004 | 300 | 90, 65, 14[61] | Microprocessors, Chipsets and Comms[49] | ||
| Intel | Fab 28[50][49] | Israel, Southern District, Kiryat Gat |
2008 | 300 | 45, 22, 10 | Microprocessors[49] | ||
| Intel | Fab 38[62] | Israel, Southern District, Kiryat Gat |
Template:Tba | 300 | Microprocessors[49] | |||
| Intel | Fab 68[50][63] | China, Dalian |
2.5 | 2010 | 300 | 65[64] | 30,000–52,000 | Microprocessors (former), VNAND[49] |
| Intel | Costa Rica, Heredia, Belén |
1997 | 300 | 22, 14 | Packaging | |||
| Tower Semiconductor (formerly Maxim) (formerly Philips) (formerly VLSI) | Fab 9[65][66] | United States, Texas, San Antonio |
2003 | 200 | 180 | 28,000 | Foundry, Al BEOL, Power, RF Analog | |
| Tower Semiconductor (formerly National Semiconductor) | Fab 1[67] | Israel, Northern District, Migdal HaEmek |
0.235[1] | 1989, 1986[1] | 150 | 1000–350 | 14,000 | Foundry, Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete |
| Tower Semiconductor | Fab 2[67] | Israel, Northern District, Migdal HaEmek |
1.226[1] | 2003 | 200 | 180–130 | 51,000[1] | Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS |
| Tower Semiconductor (formerly Jazz Technologies) (formerly Conexant) (formerly Rockwell) | Fab 3,[67] Newport Beach[1] | United States, California, Newport Beach |
0.165[1] | 1967, 1995[1] | 200 | 500-130 | 25,000[1] | Foundry, Al BEOL, SiGe, EPI |
| Tower Semiconductor – TPSCo (formerly Panasonic) | Fab 5,[67] Tonami[68] | Japan, Tonami |
1994 | 200 | 500–130 | Foundry, Analog/Mixed-Signal, Power, Discrete, NVM, CCD | ||
| Tower Semiconductor – TPSCo (formerly Panasonic) | Fab 7,[67] Uozu[68] | Japan, Uozu |
1984 | 300 | 65. 45 | Foundry, CMOS, CIS, RF SOI, Analog/Mixed-Signal | ||
| Tower Semiconductor – TPSCo (formerly Panasonic) | Fab 6,[67] Arai[68] | Japan, Arai |
1976 | 200 | 130–110 | Foundry, Analog/Mixed-Signal, CIS, NVM,Thick Cu RDL | ||
| Nuvoton[69] | Fab2 | Taiwan | 150 | 1000-350 | 45,000[69] | Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor | ||
| ISRO | SCL[70] | India, Mohali |
2006 | 200 | 180 | MEMS, CMOS, CCD, N.S. | ||
| STAR-C[71][72] | MEMS[72] | India, Bangalore |
1996 | 150 | 1000–500 | MEMS | ||
| STAR-C[71][72] | CMOS[72] | India, Bangalore |
1996 | 150 | 1000–500 | CMOS | ||
| GAETEC[71][73] | GaAs[73] | India, Hyderabad |
1996 | 150 | 700–500 | MESFET | ||
| BAE Systems (formerly Sanders) | United States, New Hampshire, Nashua[1] |
1985[1] | 100, 150 | 140, 100, 70, 50 | MMIC, GaAs, GaN-on-SiC, foundry | |||
| Qorvo (formerly RF Micro Devices) | United States, North Carolina, Greensboro[74] |
100,150 | 500 | 8,000 | SAW filters, GaAs HBT, GaAs pHEMT, GaN | |||
| Qorvo (formerly TriQuint Semiconductor) (formerly Micron) (formerly Texas Instruments) (formerly TwinStar Semiconductor) | United States, Texas, Richardson[74] |
0.5 | 1996 | 100, 150, 200 | 350, 250, 150, 90 | 8,000 | DRAM (former), BAW filters, power amps, GaAs pHEMT, GaN-on-SiC | |
| Qorvo (formerly TriQuint Semiconductor) | United States, Oregon, Hillsboro[74] |
100, 150 | 500 | Power amps, GaAs | ||||
| Apple (formerly Maxim) (formerly Samsung) | X3[75] | United States, California, San Jose |
?, 1997, 2015[76] | 600–90 | ||||
| Analog Devices (formerly Maxim Integrated) | MaxFabNorth[77] | United States, Oregon, Beaverton |
(+1, future)[78] | |||||
| Rohm[79] (formerly Renesas) | Shiga Factory | Japan | 200 | 150 | IGBT, MOSFET, MEMS | |||
| Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)[79][80] | Miyasaki | Japan | 150 | MEMS | ||||
| Rohm (Lapis Semiconductor)[79] | Building No.1 | Japan | 1961[81] | Transistors | ||||
| Rohm (Lapis Semiconductor)[79] | Building No.2 | Japan | 1962[81] | Transistors | ||||
| Rohm (Lapis Semiconductor)[79] | Building No.3 | Japan | 1962[81] | Transistors | ||||
| Rohm (Lapis Semiconductor)[79] | Building No.4 | Japan | 1969[81] | Transistors | ||||
| Rohm (Lapis Semiconductor)[79] | Chichibu Plant | Japan | 1975[81] | DRAM | ||||
| Rohm (Lapis Semiconductor)[79] | VLSI Laboratory No. 1 | Japan | 1977[81] | VLSI | ||||
| Rohm (Lapis Semiconductor)[79] | VLSI Laboratory No. 2 | Japan | 1983[81] | |||||
| Rohm (Lapis Semiconductor)[79] | VLSI Laboratory No. 3 | Japan | 1983[81] | DRAM | ||||
| Rohm (Lapis Semiconductor)[79] | Oregon Plant | United States, Oregon |
1990[81] | |||||
| Rohm (Lapis Semiconductor)[79] | Thailand | 1992[81] | ||||||
| Rohm (Lapis Semiconductor)[79] | ULSI Laboratory No. 1 | Japan | 1992[81] | 500 | DRAM | |||
| Rohm (Kionix)[82] | Ithaca | United States, New York, Ithaca |
150 | MEMS | ||||
| Rohm (Kionix)[82] (formerly Renesas Kyoto) | Kyoto | Japan, Kyoto |
200 | MEMS | ||||
| Oki Electric Industry[83] | Japan, Tokyo, Minato-ku |
1961 | 76, 100, 130, 150 | 7,200 | Bipolar, Mask ROM | |||
| Oki Electric Industry[83] | Miyazaki Oki Electric Co[84] | Japan, Miyazaki prefecture, Miyazaki-gun |
1981 | 76, 100, 130, 150 | 3000, 1500–500 | 7,200 | Bipolar, Mask ROM, DRAM[81] | |
| Oki Electric Industry[83] | Miyagi Facility[84] | Japan, Miyagi prefecture, Kurokawa-gun |
1988[81] | 76, 100, 130, 150, 200 | 800–130 | 7,200 | Bipolar, Mask ROM, SoCs, Memory[85] | |
| Oki Electric Industry[83] | Hachioji Facility[84] | Japan, Tokyo, Hachioji-shi |
76, 100, 130, 150 | 7,200 | Bipolar, Mask ROM | |||
| Fuji Electric[86] | Omachi | Japan, Nagano Prefecture |
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| Fuji Electric[87] | Iyama | Japan, Nagano Prefecture |
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| Fuji Electric[88] | Hokuriku | Japan, Toyama prefecture |
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| Fuji Electric[89] | Matsumoto[84] | Japan, Nagano prefecture |
100, 150 | 2000–1000 | 20,000 | CMOS. BiCMOS, bipolar, ASICs, discrete | ||
| Fujitsu | Kawasaki | Japan, Kawasaki |
1966[90] | |||||
| Fujitsu[91][92] | Fab B1 (at Mie)[93] | Japan, 1500 Tadocho Mizono, Kuwana, Mie[94] | 2005 | 300 | 65, 90 | 15,000 | Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs | |
| Fujitsu[91][92] | Fab B2 (at Mie)[93] | Japan, 1500 Tadocho Mizono, Kuwana, Mie[94] | 1 (total)[95] | 2007, July | 300 | 65, 90 | 25,000 | Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs[96] |
| Fujitsu[91][92] | Japan, 1500 Tadocho Mizono, Kuwana, Mie[94] | 2015 | 300 | 40[97] | 5,000 | Foundry | ||
| Fujitsu | Kumagaya Plant[93] | Japan, Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801 |
1974 | |||||
| Fujitsu[98] | Suzaka Plant | Japan, Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501 |
||||||
| Denso (formerly Fujitsu) | Iwate Plant[99][4][84] | Japan, Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593 |
125, 150, 200 | 1500–350 | 100,000 | CMOS, MOS, bipolar | ||
| Denso[100] | Denso Iwate[101][102][103] | Japan, Iwate Prefecture, Kanegasaki-cho |
0.088 | Template:Tba | Semiconductor wafers and sensors (since June 2017) | |||
| Canon Inc. | Oita[104] | Japan | ||||||
| Canon Inc. | Kanagawa[105] | Japan | ||||||
| Canon Inc. | Ayase[104] | Japan | ||||||
| Sharp Corporation | Fukuyama[106][84] | Japan | 125, 150, 200 | 1000, 800, 600 | 85,000 | CMOS | ||
| Japan Semiconductor | Iwate | Japan | ||||||
| Japan Semiconductor[107] | Oita | Japan | ||||||
| Japan Advanced Semiconductor Manufacturing, Inc[108] | Kumamoto | Japan | 20+ | 2024 | 12 | 40, 22/28, 12/16 and 6/7 | 100,000+ | |
| Kioxia | Yokkaichi Operations[109][110] | Japan, Yokkaichi |
1992 | 173,334[111][112][113][114] | Flash Memory | |||
| Kioxia/SanDisk | Y5 Phase 1 (at Yokkaichi Operations) | Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[115] | 2011 | Flash | ||||
| Kioxia/SanDisk | Y5 Phase 2[115] (at Yokkaichi Operations) | Japan, Mie |
2011 | 300 | 15[116] | Flash | ||
| Kioxia[117] | Y3 (at Yokkaichi Operations) | Japan, Yokkaichi |
300 | NAND Memory | ||||
| Kioxia[118] | Y4 (at Yokkaichi Operations) | Japan, Yokkaichi |
2007 | 300 | NAND Memory | |||
| Kioxia[119] | Kaga Toshiba | Japan, Ishikawa |
Power semiconductor devices | |||||
| Kioxia[120] | Oita Operations | Japan, Kyushu |
||||||
| Kioxia[121][122] | Y6 (phase 1) (at Yokkaichi Operations)[123] | Japan, Yokkaichi |
1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[124][110] | 2018 | 300 | BiCS FLASH™ | ||
| Kioxia[121][122] | Y6 (phase 2) (at Yokkaichi Operations) | Japan, Yokkaichi |
1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[124][110] | Planned | 300 | BiCS FLASH™ | ||
| Kioxia[121][122] | Y7 | Japan, Yokkaichi |
4.6[125][126] | Planned | 300 | BiCS FLASH™ | ||
| Kioxia[121] | Y2 (at Yokkaichi Operations) | Japan, Yokkaichi |
1995 | 3D NAND | ||||
| Kioxia[127][128] | New Y2 (at Yokkaichi Operations) | Japan, Yokkaichi |
2016, July 15 | 300 | 3D NAND | |||
| Kioxia[129][130][131][132] | K1 | Japan, Iwate Prefecture |
Template:Tba | 300 | 3D NAND | |||
| Western Digital[133][134] | ||||||||
| Hitachi[135] | Rinkai Factory | Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319–1221 | MEMS Foundry | |||||
| Hitachi[135] | Haramachi Factory | Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 | Power semiconductors | |||||
| Hitachi[135] | Yamanashi Factory | Japan, 545, Itchohata, Chuo-shi, Yamanashi, 409-3813 | Power semiconductors | |||||
| ABB[136] | Lenzburg | Switzerland, Aargau, Lenzburg |
0.140 | 2010 (second phase) | 130, 150 | 18,750 (225,000 per year) | High power semiconductors, diodes, IGBT, BiMOS | |
| ABB[136] (formerly Polovodiče a.s.)[137] | Czech Republic, Prague | High power semiconductors, diodes[138] | ||||||
| Mitsubishi Electric[139] | Power Device Works, Kunamoto Site[84] | Japan | 100, 125, 150, 200 | 2000–400 | 122,000 | Power semiconductors | ||
| Mitsubishi Electric[139] | Power Device Works, Fukuoka Site[84] | Japan, Kunamoto Prefecture, Fukuoka City[140] |
100, 150 | 3000–2000 | 50,000 | Power semiconductors and sensors[140] | ||
| Mitsubishi Electric[141] | High frequency optical device manufacturing plant[84] | Japan, Hyogo Prefecture[141] |
100, 125 | 30,000 | High frequency semiconductor devices (GaAsFET, GaN, MMIC)[141] | |||
| Powerchip Semiconductor | Memory Foundry, Fab P1[142][143] | Taiwan, Hsinchu |
2.24[1] | 2002[1] | 300 | 90, 70, 22[144] | 80,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC |
| Powerchip Semiconductor | Fab P2[143] | Taiwan, Hsinchu, Hsinchu Science Park |
1.86[1] | 2005[1] | 300 | 90, 70, 22[144] | 80,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC |
| Powerchip Semiconductor (formerly Macronix) | Fab P3[143] | Taiwan, Hsinchu, Hsinchu Science Park |
300 | 90, 70, 22[144] | 20,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC | ||
| SPIL (formerly ProMOS) | ProMOS Fab 4[145][146] | Taiwan, Taichung |
1.6 | 300 | 70 | |||
| Macronix (formerly ProMOS)[147] | Fab 5 | Taiwan, Hsinchu[148] | 300 | 50,000 | ||||
| Macronix[147] | Fab 2 | Taiwan | 200 | 48,000 | ||||
| Hon Young Semiconductor (formerly Macronix[147]) | Fab 1[149] | 150 | 800-400 | 40,000 | Foundry, SiC, Automotive MOSFETs, MEMS | |||
| Renesas[150] | Naka Factory | Japan | 2009 | 300 | 28[151] | |||
| Renesas (formerly Trecenti) | Japan[152][153] | 300 | 180, 90, 65 | Foundry | ||||
| Renesas[150] | Takasaki Factory | Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021 | ||||||
| Renesas[150] | Shiga Factory | Japan, 2-9-1, Seiran, Otsu-shi, Shiga, 520-8555 | ||||||
| Renesas[150] | Yamaguchi Factory | Japan, 20192–3, Higashimagura Jinga, Ube-shi, Yamaguchi, 757-0298 | ||||||
| Renesas[150] | Kawashiri Factory | Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861–4195 | ||||||
| Renesas[150] | Saijo Factory | Japan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501 | ||||||
| Renesas[150] | Musashi Site | Japan, 5-20-1, Josuihon-cho, Kodaira-shi, Tokyo, 187-8588 | ||||||
| Renesas – Intersil[150] | Palm Bay | United States, Florida, Palm Bay |
||||||
| Integrated Device Technology | United States, Oregon, Hillsboro |
1997 | 200 | 140–100[154] | ||||
| NEC[83] | 100, 130, 150 | SRAM, DRAM | ||||||
| NEC[155] | Japan | DRAM | ||||||
| TSI Semiconductors[156] (formerly Renesas) | Roseville fab, M-Line, TD-Line, K-Line[157][1] | United States, California, Roseville |
1992, 1985[1] | 200 | ||||
| TDK – Micronas | FREIBURG[158][159] | Germany, 19 D-79108, Hans-Bunte-Strasse |
||||||
| TDK (formerly Renesas) | Tsuruoka Higashi[160][161] | 125[162] | ||||||
| TDK | Japan, Saku[163] |
|||||||
| TDK – Tronics | United States, Texas, Addison[164] |
|||||||
| Silanna (formerly Sapphicon Semiconductor) | Australia, New South Wales, Sydney[1] |
0.030 | 1965,1989[1] | 150 | ||||
| Silanna (formerly Sapphicon Semiconductor) (formerly Peregrine Semiconductor) (formerly Integrated Device Technology) | Australia, New South Wales, Sydney |
150 | 500, 250 | RF CMOS, SOS, foundry | ||||
| Murata Manufacturing[166] | Nagano[162] | Japan | 0.100 | Murata en France (ex IPDIA): see https://www.ouest-france.fr/economie/industries/electronique-sous-banniere-japonaise-le-normand-ipdia-devient-geant-4646889 | SAW filters[162] | |||
| Murata Manufacturing[166] | Otsuki[162] | Japan | ||||||
| Murata Manufacturing[166] | Kanazawa | Japan | 0.111 | SAW filters[162] | ||||
| Murata Manufacturing (formerly Fujifilm)[167][168] | Sendai | Japan, Miyagi Prefecture |
0.092[162] | MEMS[169] | ||||
| Murata Manufacturing[167] | Yamanashi | Japan, Yamanashi Prefecture |
||||||
| Murata Manufacturing[170] | Yasu | Japan, Shiga Prefecture, Yasu |
||||||
| Murata Electronics (Finland)[171] (formerly VTI, since 1979 Vaisalas int. semicon. line)[172] | Vantaa | Finland | 2012,[173] expanded 2019[174] | 3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc.[175] | ||||
| Mitsumi Electric[176] | Semiconductor Works #3 | Japan, Atsugi Operation Base |
2000 | |||||
| Mitsumi Electric[176] | Japan, Atsugi Operation Base |
1979 | ||||||
| Sony[177] | Kagoshima Technology Center[84] | Japan, Kagoshima |
1973 | 100, 125, 150 | 2000–500 | 110,000 | Bipolar CCD, MOS, MMIC, SXRD | |
| Sony[177] | Oita Technology Center | Japan, Oita |
2016 | CMOS Image Sensor | ||||
| Sony[177] | Nagasaki Technology Center[84] | Japan, Nagasaki |
1987 | 150 | 1000-350 | 80,000 | MOS LSI, CMOS Image Sensors, SXRD | |
| Sony[177] | Kumamoto Technology Center | Japan, Kumamoto |
2001 | CCD Image Sensors, H-LCD, SXRD | ||||
| Sony[177] | Shiroishi Zao Technology Center | Japan, Shiroishi |
1969 | Semiconductor Lasers | ||||
| Sony | Sony Shiroishi Semiconductor Inc. | Japan, Miyagi |
Semiconductor Lasers[178] | |||||
| Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC)[177][179][180] | Yamagata Technology Center[84] | Japan, Yamagata |
2014 (Sony) | 100, 125, 150, 200 | 3000, 2000, 800 | MOS, bipolar, CMOS Image Sensor, eDRAM (formerly) | ||
| SK Hynix[181] | China, Chongqing |
|||||||
| SK Hynix[181] | China, Chongqing |
|||||||
| SK Hynix[182][183] | South Korea, Cheongju, Chungcheongbuk-do |
Template:Tba[184] | NAND Flash | |||||
| SK Hynix[183] | South Korea, Cheongju |
Template:Tba | NAND Flash | |||||
| SK Hynix | HC1 | China, Wuxi |
300 | 100,000[18] | DRAM | |||
| SK Hynix | HC2 | China, Wuxi |
300 | 70,000[18] | DRAM | |||
| SK Hynix[183] | M16 | South Korea, Icheon |
3.13 (13.4 total planned) | 2021 (planned) | 300 | 10 (EUV) | 15,000–20,000 (initial) | DRAM |
| LG Innotek[185] | Paju | South Korea, 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842 |
LED Epi-wafer, Chip, Package | |||||
| ON Semiconductor (formerly GlobalFoundries) (formerly IBM)[186][187][188] | United States, New York, East Fishkill |
2.5, +.29 (future)[189] | 2002 | 300 | 90–22, 14 | 12,000–15,000[189] | Foundry, RF SOI, SOI FinFET (former), SiGe, SiPh | |
| ON Semiconductor (formerly LSI) | Gresham[190] | United States, Oregon, Gresham |
200 | 110 | ||||
| ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) | United States, Pennsylvania, Mountain Top |
1960–1997 | 200 | 350 | ||||
| ON Semiconductor (formerly TESLA) | Roznov | Czech Republic, Zlín, Rožnov pod Radhoštěm |
1956 | 150, 200 | 1000 | 80,000 | Si, SiC | |
| ON Semiconductor (formerly Motorola) | ISMF | Malaysia, Seremban |
150 | 350 | 80,000 | Discrete | ||
| ON Semiconductor (formerly Fujitsu)[191][192] | Aizu Wakamatsu Plant[193][84] | Japan, Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502 |
1970[90] | 150, 200[194][195][196][197] | 2000-130 | Memory, Logic | ||
| JS Foundry K.K. (formerly ON Semiconductor) (formerly Sanyo)[198][199] | Niigata[84] | Japan, Niigata |
125, 150 | 2000–600, 350 | 120,000 | CMOS, bipolar, BiCMOS | ||
| BelGaN Group (formerly ON Semiconductor) (formerly AMI Semiconductor) (formerly Alcatel Microelectronics) (formerly Mietec)[200] | Oudenaarde[201] | Belgium, East Flanders, Oudenaarde |
150, 200 | 3000, 2000–350 | GaN, mixed-signal CMOS, BCD foundry | |||
| LA Semiconductor (formerly ON Semiconductor) (formerly AMI Semiconductor) | Pocatello[202] | United States, Idaho, Pocatello |
1997[203] | 200 | 350 | |||
| Diodes Incorporated[204] (formerly ON Semiconductor) (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) | SPFAB | United States, Maine, South Portland |
1960–1997 | 200 | 350 | |||
| Diodes Incorporated[205] (formerly Zetex Semiconductors) | OFAB | UK, England, Greater Manchester, Oldham |
150 | |||||
| Diodes Incorporated (formerly BCD Semi)[206] | China | 150 | 4000–1000 | |||||
| Lite-On Optoelectronics[207] | China, Tianjin |
|||||||
| Lite-On Optoelectronics[207] | Thailand, Bangkok |
|||||||
| Lite-On Optoelectronics[207] | China, Jiangsu |
|||||||
| Lite-On Semiconductor[208] | Keelung Plant | Taiwan, Keelung |
1990 | 100 | Thyristor, DIscrete | |||
| Lite-On Semiconductor[208] | Hsinchu Plant | Taiwan, Hsinchu |
2005 | Bipolar BCD, CMOS | ||||
| Lite-On Semiconductor[208] | Lite-On Semi (Wuxi) | China, Jiangsu |
2004 | 100 | Discrete | |||
| Lite-On Semiconductor[208] | Wuxi WMEC Plant | China, Jiangsu |
2005 | Discrete, Power, Optical ICs | ||||
| Lite-On Semiconductor[208] | Shanghai (SSEC) Plant | China, Shanghai |
1993 | 76 | Fab, Assembly | |||
| Trumpf[209] (formerly Philips Photonics) | Germany, Baden-Württemberg, Ulm |
VCSEL | ||||||
| Philips[210] | Netherlands, North Brabant, Eindhoven |
150, 200 | 30,000 | R&D, MEMS | ||||
| Newport Wafer Fab[211] (formerly Infineon Technologies) | FAB11 | UK, Wales, Newport |
200[212] | 700-180[212] | 32,000[212] | Foundry, Compound Semiconductors, IC, MOSFET, IGBT[213] | ||
| Nexperia (formerly NXP Semiconductors) (formerly Philips) | Hamburg site[214] | Germany, Hamburg |
1953 | 200 | 35,000 | Small-signal and bipolar discrete devices | ||
| Nexperia (formerly NXP Semiconductors) (formerly Philips) (formerly Mullard) | Manchester[214] | UK, England, Greater Manchester, Stockport |
1987? | 150, 200 | 24,000 | GaN FETs, TrenchMOS MOSFETs | ||
| NXP Semiconductors (formerly Philips) | ICN8 | Netherlands, Gelderland, Nijmegen |
200 | 40,000+[215] | SiGe | |||
| NXP Semiconductors | Japan[83] | Bipolar, Mos, Analog, Digital, Transistors, Diodes | ||||||
| NXP Semiconductors - SSMC | SSMC | Singapore | 1.7[1] | 2001[1] | 200 | 120 | 53,000 | SiGe |
| NXP Semiconductors – Jilin Semiconductor | China, Jilin |
130 | ||||||
| NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | Oak Hill Fab[216] | United States, Texas, Austin |
0.8[217] | 1991 | 200 | 250 | ||
| NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | Chandler Fab[218] | United States, Arizona, Chandler[219] |
1.1[220] +0.1 (GaN) | 1993 | 150 (GaN), 200 | 180 | GaN-on-SiC pHEMT | |
| NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | ATMC[221] | United States, Texas, Austin |
1995 | 200 | 90 | |||
| NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | MOTOFAB1[222] | Mexico, Jalisco, Guadalajara |
2002 | |||||
| AWSC | Taiwan, Tainan[1] |
1999[1] | 150 | 12,000 | Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP | |||
| Skyworks Solutions[223] (formerly Conexant) (formerly Rockwell) | United States, California, Newbury Park |
100, 150 | Compound Semiconductors (GaAs, AlGaAs, InGaP) | |||||
| Skyworks Solutions[223] (formerly Alpha Industries) | United States, Massachusetts, Woburn |
100, 150 | RF/cellular components (SiGe, GaAs) | |||||
| Skyworks Solutions[223] | Japan, Osaka |
SAW, TC-SAW Filters | ||||||
| Skyworks Solutions[223] | Japan, Kadoma |
SAW, TC-SAW Filters | ||||||
| Skyworks Solutions[223] | Singapore, Bedok South Road |
SAW, TC-SAW Filters | ||||||
| Win Semiconductor | Fab A[224] | Taiwan, Taoyuan City |
150[225] | 2000–10 | Foundry, GaAs | |||
| Win Semiconductor | Fab B[224] | Taiwan, Taoyuan City |
150[225] | 2000–10 | Foundry, GaAs, GaN | |||
| Win Semiconductor | Fab C | Taiwan, Taoyuan[1] |
0.050, 0.178 | 2000, 2009[1] | 150 | Foundry, GaAs | ||
| ams[226] | FAB B | Austria, Styria, Unterpremstätten |
200 | 350 | ||||
| Osram (Osram Opto Semiconductors) | Malaysia, Kulim, Kulim Hi-Tech Park |
0.350, 1.18[227] | 2017, 2020 (second phase, planned)[228][229] | 150 | LEDs | |||
| Osram (Osram Opto Semiconductors) | Malaysia, Penang[230][231] |
2009 | 100 | LEDs | ||||
| Osram (Osram Opto Semiconductors) | Germany, Bavaria, Regensburg[232] |
2003, 2005 (second phase)[233] | LEDs | |||||
| Winbond | Memory Product Foundry[234] | Taiwan, Taichung |
300 | 46 | ||||
| Winbond | CTSP Site[235][236] | Taiwan, No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881 |
300 | |||||
| Winbond[237] | Planned | 300 | ||||||
| Vanguard International Semiconductor | Fab 1[149] | Taiwan, Hsinchu |
0.997[1] | 1994[1] | 200 | 500, 350, 250 | 55,000 | Foundry, CMOS |
| Vanguard International Semiconductor (formerly Winbond) | Fab 2 (formerly Fab 4&5)[238] | Taiwan, Hsinchu |
0.965[1] | 1998[1] | 200 | 55,000 | Foundry | |
| Vanguard International Semiconductor Corporation (formerly GlobalFoundries) (formerly Chartered) | Fab 3E[239] | Singapore | 1.3[1] | 200 | 180 | 34,000 | Foundry | |
| TSMC | Fab 2[240][149] | Taiwan, Hsinchu |
0.735[1] | 1990[1] | 150 | 800, 600, 500 | 88,000[241][1] | Foundry, CMOS |
| TSMC | Fab 3[149] | Taiwan, Hsinchu |
2[1] | 1995[1] | 200 | 500, 350, 250 | 100,000[1] | Foundry, CMOS |
| TSMC | Fab 5[149] | Taiwan, Hsinchu |
1.4[1] | 1997[1] | 200 | 350, 250, 180 | 48,000[1] | Foundry, CMOS |
| TSMC | Fab 6 | Taiwan, Tainan |
2.1[1] | 2000, January; 2001[152] | 200, 300 | 180–? | 99,000[1] | Foundry |
| TSMC (formerly TASMC) (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments)[242][243][244] | Fab 7[245] | Taiwan | 200 | 350, 250, 220, 180 | 33,000 | Foundry (current)
DRAM (former), Logic (former) | ||
| TSMC (formerly WSMC) | Fab 8[246] | Taiwan, Hsinchu |
1.6[1] | 1998[1] | 200 | 250, 180 | 85,000[1] | Foundry |
| TSMC (formerly WSMC)[153] | 2000 | 200 | 250, 150 | 30,000 | Foundry | |||
| TSMC China Company | Fab 10 | China, Shanghai |
1.3[1] | 2004[1] | 200 | 74,000 | Foundry | |
| TSMC | Fab 12 | Taiwan, Hsinchu |
5.2, 21.6 (total, all phases combined)[1] | 2001[1] | 300 | 150–28 | 77,500–123,800 (all phases combined)[1] | Foundry |
| TSMC | Fab 12 (P4) | Taiwan, Hsinchu |
6[1] | 2009[1] | 300 | 20 | 40,000[1] | Foundry |
| TSMC | Fab 12 (P5) | Taiwan, Hsinchu |
3.6[1] | 2011[1] | 300 | 20 | 6,800[1] | Foundry |
| TSMC | Fab 12 (P6) | Taiwan, Hsinchu |
4.2[1] | 2013[1] | 300 | 16 | 25,000 | Foundry |
| TSMC | Fab 14 | Taiwan, Tainan |
5.1[1] | 2002,[152] 2004[1] | 300 | 20 | 82,500[1] | Foundry |
| TSMC | Fab 14 (B) | Taiwan, Tainan |
300 | 16 | 50,000+[247] | Foundry | ||
| TSMC | Fab 14 (P3)[1] | Taiwan, Tainan |
3.1[1] | 2008[1] | 300 | 16 | 55,000[1] | Foundry |
| TSMC | Fab 14 (P4)[1] | Taiwan, Tainan |
3.750[1] | 2011[1] | 300 | 16 | 45,500[1] | Foundry |
| TSMC | Fab 14 (P5)[1] | Taiwan, Tainan |
3.650[1] | 2013[1] | 300 | 16 | Foundry | |
| TSMC | Fab 14 (P6)[1] | Taiwan, Tainan |
4.2[1] | 2014[1] | 300 | 16 | Foundry | |
| TSMC | Fab 14 (P7)[1] | Taiwan, Tainan |
4.850[1] | 2015[1] | 300 | 16 | Foundry | |
| TSMC | Fab 15[248] | Taiwan, Taichung |
9.3 | 2011 | 300 | 20 | 100,000+(166,000 estimate)[249][247][250] | Foundry |
| TSMC | Fab 15 (P1)[1] | Taiwan, Taichung |
3.125[1] | 2011 | 300 | 4,000[1] | Foundry | |
| TSMC | Fab 15 (P2)[1] | Taiwan, Taichung |
3.150[1] | 2012[1] | 300 | Foundry | ||
| TSMC | Fab 15 (P3)[1] | Taiwan, Taichung |
3.750[1] | 2013[1] | 300 | Foundry | ||
| TSMC | Fab 15 (P4)[1] | Taiwan, Taichung |
3.800[1] | 2014[1] | 300 | Foundry | ||
| TSMC | Fab 15 (P5)[1] | Taiwan, Taichung |
9.020[1] | 2016[1] | 300 | 35,000 | Foundry | |
| TSMC | Fab 18 (P1-P3) | Taiwan, Southern Taiwan Science Park[251][252] |
17.08 | 2020 (P7 under construction) | 300 | 5[253] | 120,000 | Foundry |
| TSMC | Fab 18 (P4-P6) | Taiwan, Southern Taiwan Science Park |
Template:Tba | 300 | 3[18][254][255] | 120,000 | Foundry | |
| TSMC | Fab 21 | United States, Arizona, Phoenix |
12[256] | Q1 2024 (planned), P1 under construction[256][257] | 300 | 5 & 4[257] | 20,000[257] | Foundry |
| Epistar | Fab F1[258] | Taiwan, Longtan Science Park |
LEDs | |||||
| Epistar | Fab A1[258] | Taiwan, Hsinchu Science Park |
LEDs | |||||
| Epistar | Fab N2[258] | Taiwan, Hsinchu Science Park |
LEDs | |||||
| Epistar | Fab N8[258] | Taiwan, Hsinchu Science Park |
LEDs | |||||
| Epistar | Fab N1[258] | Taiwan, Hsinchu Science Park |
LEDs | |||||
| Epistar | Fab N3[258] | Taiwan, Hsinchu Science Park |
LEDs | |||||
| Epistar | Fab N6[258] | Taiwan, Chunan Science Park |
LEDs | |||||
| Epistar | Fab N9[258] | Taiwan, Chunan Science Park |
LEDs | |||||
| Epistar | Fab H1[258] | Taiwan, Central Taiwan Science Park |
LEDs | |||||
| Epistar | Fab S1[258] | Taiwan, Tainan Science Park |
LEDs | |||||
| Epistar | Fab S3[258] | Taiwan, Tainan Science Park |
LEDs | |||||
| Epistar (formerly TSMC)[259][260][261] | Taiwan, Hsin-Chu Science Park |
0.080 | 2011, second half | LEDs | ||||
| Lextar | T01 | Taiwan, Hsinchu Science Park |
LEDs | |||||
| GCS | United States, California, Torrance[1] |
1999[1] | 100 | 6,400 | Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs | |||
| Bosch | Germany, Baden-Württemberg, Reutlingen |
1995[262] | 150 | ASIC, analog, power, SiC | ||||
| Bosch | Germany, Saxony, Dresden |
1.0[263] | 2021 | 300 | 65 | |||
| Bosch | WaferFab | Germany, Baden-Württemberg, Reutlingen |
0.708[264] | 2010[262] | 200 | 30,000 | ASIC, analog, power, MEMS | |
| STMicroelectronics | AMK8 (second, newer fab) | Singapore, Ang Mo Kio |
1995 | 200 | ||||
| STMicroelectronics (formerly SGS Microelettronica) | AMJ9 (first fab) | Singapore, Ang Mo Kio |
1984[265] | 150, 200 | 6" 14 kpcs/day, 8" 1.4 kpcs/day | Power-MOS/ IGBT/ bipolar/ CMOS | ||
| X-Fab | Erfurt | Germany, Thuringia, Erfurt |
1985[1] | 200[266] | 1000-600[266] | 11200–[266] | Foundry | |
| X-Fab (formerly ZMD) | Dresden | Germany, Saxony, Dresden |
0.095[1] | 1985[1] | 200[267] | 1000-350[267] | 6000–[267] | Foundry, CMOS, GaN-on-Si |
| X-Fab (formerly Itzehoe) | Itzehoe | Germany, Schleswig-Holstein, Itzehoe |
200[268] | 13000–[268] | Foundry, MEMS | |||
| X-Fab (formerly 1st Silicon)[269][270] | Kuching | Malaysia, Kuching |
1.89[1] | 2000[1] | 200[271] | 350-130[271] | 30,000–[271] | Foundry |
| X-Fab (formerly Texas Instruments) | Lubbock | United States, Texas, Lubbock |
0.197[1] | 1977[1] | 150, 200[272] | 1000-600[272] | 15000–[272] | Foundry, SiC |
| X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM)[273] | ACL-AMF | France, Île-de-France, Corbeil-Essonnes |
1991, 1964[1] | 200 | 350-130 | Foundry, CMOS, RF SOI | ||
| IXYS | Germany, Hesse, Lampertheim[274] |
IGBT[274] | ||||||
| IXYS | UK, England, Wiltshire, Chippenham[274] |
|||||||
| IXYS | United States, Massachusetts[274] |
|||||||
| IXYS | United States, California[274] |
|||||||
| Samsung | V1-Line[275] | South Korea, Hwaseong |
6 | 2020, February 20 | 300 | 7 | Microprocessors, Foundry | |
| Samsung | S3-Line[276] | South Korea, Hwaseong |
10.2, 16.2 (planned)[277][278] | 2017[277] | 300 | 10 | 200,000 | DRAM, VNAND, Foundry |
| Samsung | S2-Line[279] | United States, Texas, Austin |
16[280][281] | 2011 | 300 | 65–11 | 92,000 | Microprocessors, FDSOI, Foundry, NAND[282] |
| Samsung | S1-Line[283] | South Korea, Giheung |
33 (total) | 2005 (second phase), 1983 (first phase)[284][285] | 300 | 65–7 | 62,000 | Microprocessors, S.LSI, LEDs, FDSOI, Foundry[286] |
| Samsung | Pyeongtaek[287][288][277] | South Korea, Pyeongtaek |
14.7, 27 (total)[289][281][290][291][292][293][294][184] | 2017, July 6 | 300 | 14 | 450,000[295] | V-NAND, DRAM, Foundry |
| Samsung | 6 Line[296][149] | South Korea, Giheung |
100, 150, 200 | 1500–500, 180–65 | Foundry, CMOS, BiCMOS | |||
| Samsung | Samsung China Semiconductor[297] | China, Shaanxi Province |
DDR Memory | |||||
| Samsung | Samsung Suzhou Research Center (SSCR)[283] | China, Suzhou, Suzhou Industrial Park |
DDR Memory | |||||
| Samsung | Onyang Complex[297] | South Korea, Chungcheongnam-do |
display.backend process.test | |||||
| Samsung | F1x1[298][277] | China, Xian |
2.3[299] | 2014 (first phase, second phase is under review)[277] | 300 | 20 | 100,000 | VNAND |
| Samsung | Giheung Campus[300] | South Korea, Gyeonggi-do, Yongin |
LEDs | |||||
| Samsung | Hwasung Campus[300] | South Korea, Gyeonggi-do, Hwaseong |
LEDs | |||||
| Samsung | Tianjin Samsung LED Co., Ltd.[300] | China, Tianjin, Xiqing |
LEDs | |||||
| Seagate | United States, Minnesota, Minneapolis[301] |
|||||||
| Seagate | UK, Northern Ireland[302][303][304][305] |
|||||||
| Broadcom Inc. (formerly Avago) | United States, Colorado, Fort Collins[306] |
|||||||
| Wolfspeed (formerly Cree Inc.)[307] | Durham | United States, North Carolina, Durham |
Compound Semiconductors, LEDs | |||||
| Wolfspeed (formerly Cree Inc.)[308] | Research Triangle Park | United States, North Carolina |
GaN HEMT RF ICs | |||||
| SMART Modular Technologies | Brazil, São Paulo, Atibaia |
2006 | Packaging | |||||
| Infineon Technologies | Villach | Austria, Carinthia, Villach |
1970[309] | 100, 150, 200, 300 | MEMS, SiC, GaN | |||
| Infineon Technologies | Dresden | Germany, Saxony, Dresden |
3[310] | 1994–2011[311] | 200, 300 | 90 | ||
| Infineon Technologies | Kulim[312] | Malaysia, Kulim |
2006[313] | 200, 300 | 50,000 | |||
| Infineon Technologies | Kulim 2 | Malaysia, Kulim |
2015 | 200, 300 | 50,000 | |||
| Infineon Technologies | Regensburg[314] | Germany, Bavaria, Regensburg |
1959 | |||||
| Infineon Technologies | Cegled[315] | Hungary, Pest, Cegléd |
||||||
| Infineon Technologies | El Segundo | United States, California, El Segundo[316] |
||||||
| D-Wave Systems[317] | Superconducting Foundry[318] | Quantum Processing Units (QPUs)[318] | ||||||
| GlobalFoundries (formerly AMD) | Fab 1 Module 1[319] | Germany, Saxony, Dresden |
3.6[1] | 2005 | 300 | 45-22 | 35,000[1] | Foundry, SOI, FDSOI |
| GlobalFoundries (formerly AMD) | Fab 1 Module 2 | Germany, Saxony, Dresden |
4.9[1] | 1999 | 300 | 45-22 | 25,000[1] | Foundry, SOI |
| GlobalFoundries | Fab 1 Module 3 | Germany, Saxony, Dresden |
2.3[1] | 2011[1] | 300 | 45-22 | 6,000[1] | Foundry, SOI |
| GlobalFoundries (formerly Chartered) | Fab 2[239] | Singapore | 1.3[1] | 1995[1] | 200 | 600-350 | 56,000[1] | Foundry, SOI |
| GlobalFoundries (formerly Chartered) | Fab 3/5[239] | Singapore | 0.915, 1.2[1] | 1997, 1995[1] | 200 | 350-180 | 54,000 | Foundry, SOI |
| GlobalFoundries (formerly Chartered) | Fab 6[239] (merged into Fab 7) | Singapore | 1.4[1] | 2000[1] | 200, 300 (merged) | 180-110 | 45,000 | Foundry, SOI |
| GlobalFoundries (formerly Chartered) | Fab 7[319] | Singapore | 4.6[1] | 2005[1] | 300 | 130, 110, 90, 65, 40 | 50,000 | Foundry, Bulk CMOS, RF SOI |
| GlobalFoundries | Fab 8[319] | United States, New York, Malta |
4.6, 2.1, (1, future)[320] 13+ (total)[189][321] | 2012, 2014[1] | 300 | 28, 22, 14, 12 | 60,000 (+12,500 future) | Foundry, High-K Metal Gate,[322] SOI FinFET |
| GlobalFoundries (formerly IBM[323]) | Fab 9 | United States, Vermont, Essex Junction | 1957[324] | 200 | 350-90 | 50,000[325] | Foundry, SiGe, RF SOI, GaN[325] | |
| GlobalFoundries | Technology Development Center[1] | United States, New York, Malta |
1.5[1] | 2014[1] | ||||
| SUNY Poly CNSE | NanoFab 300 North[326] | United States, New York, Albany |
0.175, 0.050 | 2004, 2005 | 300 | 65, 45, 32, 22 | ||
| SUNY Poly CNSE | NanoFab 200[327] | United States, New York, Albany |
0.016 | 1997 | 200 | |||
| SUNY Poly CNSE | NanoFab Central[326] | United States, New York, Albany |
0.150 | 2009 | 300 | 22 | ||
| Skorpios Technologies (formerly Novati) (formerly ATDF) (formerly SEMATECH) | United States, Texas, Austin[1][328] |
0.065 | 1989[1] | 200 | 10,000 | MEMS, photonics, foundry | ||
| Opto Diode | United States, California, Camarillo[329] |
|||||||
| Optek Technology[83] | 1968 | 100, 150 | GaAs, LEDs | |||||
| II-VI (formerly Oclaro) (formerly Bookham) (formerly NORTHERN TELECOM SEMICONDUCTOR
NORTHERN TELECOM EUROPE[83]) (formerly JDS Uniphase) (formerly Uniphase) |
Semiconductor Lasers, Photodiodes | |||||||
| Infinera | United States, California, Sunnyvale[330][331] |
|||||||
| Rogue Valley Microdevices[332][333][334] | United States, Oregon, Medford |
2003 | 50.8–300 | MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D | ||||
| Atomica | Fab 1 | United States, California, Goleta |
2000 | 150, 200 | 350 | 20,000 | Foundry: MEMS, Photonics, Sensors, Biochips | |
| Sensera | uDev-1 | United States, Massachusetts, Woburn |
2014 | 150 | 700 | 1,000 | MEMS, MicroDevice assembly | |
| Rigetti Computing | Fab-1[335][336][337] | United States, California, Fremont |
130 | Quantum Processors | ||||
| NHanced Semiconductors[338] | MNC | United States, North Carolina, Morrisville |
2001 | 100, 150, 200 | >=500 | 1000 | MEMS, Silicon Sensors, BEoL, 2.5/3D and advanced packaging | |
| Polar Semiconductor[339] | FAB 1,2,3 | United States, Minnesota, Bloomington |
200 | BCD, HV, GMR | ||||
| Orbit Semiconductor[83] | 100 | CCD, CMOS | ||||||
| Entrepix | United States, Arizona, Tempe[1] |
2003[1] | ||||||
| Medtronic | United States, Arizona, Tempe[1] |
1973[1] | ||||||
| Technologies and Devices International | United States, Florida, Silver Springs[1] |
2002[1] | ||||||
| Soraa Inc | United States, California[340][341] |
|||||||
| Soraa Laser Diode[340] | ||||||||
| Mirrorcle Technologies | United States, California, Richmond[342] |
|||||||
| HTE LABS | HTE LABS | United States, California, San Jose |
0.005 | 2009 | 100, 150 | 4000–1000 | 1,000 | Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com |
| HT Micron | Brazil, Rio Grande do Sul, São Leopoldo |
2014 | DRAM, eMCP, iMCP | |||||
| Unitec do Brasil | Brazil, Minas Gerais, Ribeirão das Neves |
Planned | ||||||
| Unitec Blue[343] | Argentina, Buenos Aires Province, Chascomús |
0.3 (1.2 planned)[344] | 2013 | RFID, SIM, EMV | ||||
| Everlight | Yuan-Li Plant | Taiwan, Miao-Li |
LEDs | |||||
| Everlight | Pan-Yu Plant | China | LEDs | |||||
| Everlight | Tu-Cheng Plant | Taiwan, Taipei Country |
LEDs | |||||
| Optotech[345] | Taiwan, Hsinchu |
LEDs | ||||||
| Arima Optoelectronics | Taiwan, Hsinchu[1] |
1999[1] | ||||||
| Episil Semiconductor | Taiwan, Hsinchu[1] |
1992, 1990, 1988[1] | ||||||
| Episil Semiconductor | Taiwan, Hsinchu[1] |
1992, 1990, 1988[1] | ||||||
| Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine.[346][347] | NanChang Creative Sensor | China, Jiangxi |
2007 | Image Sensors | ||||
| Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine. Archived 2017-07-07 at the Wayback Machine.[346] | Wuxi Creative Sensor | China, JiangSu |
2002 | |||||
| Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine. Archived 2017-07-07 at the Wayback Machine.[346] | Wuxi Creative Sensor | Taiwan, Taipei City |
1998 | |||||
| Visera Technologies[348] | Headquarters Phase I | Taiwan, Hsinchu Science-based Industrial Park |
2007, September | CMOS Image Sensors | ||||
| Panjit | Taiwan, Kaohsiung[1] |
0.1 | 2003[1] | |||||
| Nanosystem Fabrication Facility | Hong Kong[349] | |||||||
| GTA Semiconductor (formerly ASMC)[350][351] | Fab 2, Fab 3[352] | China, Shanghai, Xuhui District |
200 | 350, 180, 150[353] | 55333 | HV Analog, Power | ||
| GTA Semiconductor | Fab 5, Fab 6 | China, Shanghai, Pudong New Area |
5.1[354] | 2020 | 150, 200, 300 | 115000 | ||
| Shanghai Belling[355] | China, Shanghai |
150 | 1200 | BiCMOS, CMOS | ||||
| SiSemi[356] | China, Shenzhen, Longgang High-tech Industrial Park[357] |
2004 | 130 | Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs | ||||
| SiSemi[357] | 1997 | 100 | Transistors | |||||
| CRMicro (formerly CSMC)[358] | Fab 1 | 1998[1] | 150[359] | 60,000[1] | HV Analog, MEMS, Power, Analog, Foundry | |||
| CRMicro (formerly CSMC) | Fab 2 | China, Wuxi |
2008[1] | 200[359] | 180, 130 | 40,000[1] | HV Analog, Foundry | |
| CRMicro (formerly CSMC) | Fab 3 | 1995[1] | 200[359] | 130 | 20,000[1] | |||
| CRMicro (formerly CSMC) | Fab 5 | 2005[1] | 30,000[1] | |||||
| Nexchip[18] | N1[360] | China, Hefei |
Template:Tba | 300 | 40,000 | Display Drivers IC[361] | ||
| Nexchip[18] | N2[360] | China, Hefei |
Template:Tba | 300 | 40,000 | |||
| Nexchip[18] | N3[360] | China, Hefei |
Template:Tba | 300 | 40,000 | |||
| Nexchip[18] | N4[360] | China, Hefei |
Template:Tba | 300 | 40,000 | |||
| Wandai[18] | CQ | China, Chongqing |
Template:Tba | 300 | 20,000 | |||
| San'an Optoelectronics[362] | Tianjin San'an Optoelectronics Co., Ltd. | China, Tianjin |
LEDs | |||||
| San'an Optoelectronics | Xiamen San'an Optoelectronics Technology Co., Ltd. | China, Xiamen |
LEDs | |||||
| San'an Optoelectronics | Xiamen San'an Optoelectronics Co., Ltd. | China, Xiamen |
LEDs | |||||
| San'an Optoelectronics | Wuhu Anrui Optoelectronics Co., Ltd. | China, Wuhu |
LEDs | |||||
| San'an Optoelectronics | Anrui San'an Optoelectronics Co., Ltd. | China, Wuhu |
LEDs | |||||
| San'an Optoelectronics | Luminus Summary | United States | LEDs | |||||
| San'an Optoelectronics | Quanzhou San'an Semiconductor Technology Co., Ltd. | China, Nan'an |
LEDs | |||||
| Sanan IC[363] | Xiamen Fab[364] | China, Xiamen |
0.00785 | 2014 | 150 | 30,000 | SAW filters, Foundry, GaA, GaN, RF, Power | |
| Sanan IC | Quanzhou Fab | China, Quanzhou |
4.6 | 2017 | 150 | 8,000 | SAW filters, Foundry, GaA, RF | |
| Sanan IC | Changsha Fab | China, Changsha |
2.3 | 2021 | 150 | 30,000 | Foundry, GaN, SiC, Power | |
| Hua Hong Semiconductor | HH Fab7 | China, Wuxi | 300 | 90-55 | 65,000[365] | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | ||
| Hua Hong Semiconductor | HH Fab1 | China, Shanghai, Jinqiao |
200 | 95 | 65,000[366] | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | ||
| Hua Hong Semiconductor | HH Fab2 | China, Shanghai, Zhangjiang |
200 | 180 | 60,000[366] | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | ||
| Hua Hong Semiconductor | HH Fab3 | China, Shanghai, Zhangjiang |
200 | 90 | 53,000[366] | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | ||
| Hua Hong Semiconductor (HLMC) | HH Fab5[367] | China, Shanghai, Zhangjiang |
2011 | 300 | 65/55-40 | 35,000 | Foundry | |
| Hua Hong Semiconductor (HLMC) | HH Fab6 | China, Shanghai, Kangqiao |
2018 | 300 | 28/22 | 40,000 | Foundry | |
| HuaLei Optoelectronic | China | LEDs[368] | ||||||
| Sino King Technology[17] | China, Hefei |
2017 | DRAM | |||||
| APT Electronics | China, Guangzhou[1] |
2006[1] | ||||||
| Aqualite | China, Guangzhou[1] |
2006[1] | ||||||
| Aqualite | China, Wuhan[1] |
2008[1] | ||||||
| Xiamen Jaysun Semiconductor Manufacturing | Fab 101 | China, Xiamen[1] |
0.035 | 2011[1] | ||||
| Xiyue Electronics Technology | Fab 1 | China, Xian[1] |
0.096 | 2007[1] | ||||
| Hanking Electronics | Fab 1 | China, Fushun |
2018 | 200 | 10,000 – 30,000 | MEMS Foundry Archived 2021-03-08 at the Wayback Machine.,
MEMS Design Archived 2021-03-08 at the Wayback Machine. MEMS Sensors (Inertial, Pressure, Ultrasound, IoT Motion Sensors | ||
| CanSemi[369] | Phase I | China, Guangzhou |
4 | 2019[370] | 300 | 180–90[371] | 20,000 | Power, Analog, Power Discrete |
| CanSemi | Phase II | China, Guangzhou |
2022 | 300 | 90-55 | 20,000 | ||
| CanSemi | Phase III | China, Guangzhou |
2.4[372] | Planned | 300 | 55-40 | 40,000 | Automotive, IoT |
| SensFab | Singapore[1] | 1995[1] | ||||||
| MIMOS Semiconductor | Malaysia, Kuala Lumpur[1] |
0.006, 0.135 | 1997, 2002[1] | |||||
| Silterra Malaysia | Fab1 | Malaysia, Kedah, Kulim |
1.6 | 2000 | 200 | 250, 200, 180–90 | 46,000 | CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal |
| Pyongyang Semiconductor Factory | 111 Factory | North Korea, Pyongyang |
1980s | 3000[373] | ||||
| DB HiTek | Fab 1 | South Korea, Bucheon[1] |
1997[1] | Foundry | ||||
| DB HiTek | Fab 2 | South Korea, Eumsung-Kun[1] |
2001[1] | Foundry | ||||
| DB HiTek | Fab 2 Module 2 | South Korea, Eumsung-Kun[1] |
Foundry | |||||
| Kodenshi AUK Group[374] | Silicon FAB Line | |||||||
| Kodenshi AUK Group[374] | Compound FAB Line | |||||||
| Kyocera | SAW devices[162] | |||||||
| Seiko Instruments[375] | China, Shanghai |
|||||||
| Seiko Instruments[375] | Japan, Akita |
|||||||
| Seiko Instruments[375] | Japan, Takatsuka |
|||||||
| NIPPON PRECISION CIRCUITS[83] | Digital | |||||||
| Epson[376] | T wing | Japan, Sakata |
1997 | 200 | 350-150 | 25,000 | ||
| Epson[376] | S wing | Japan, Sakata |
1991 | 150 | 1200-350 | 20,000 | ||
| Olympus Corporation[377] | Nagano | Japan, Nagano Prefecture |
MEMS[378] | |||||
| Olympus | Japan | MEMS[379] | ||||||
| Shindengen Electric Manufacturing[380] | Philippines, Laguna, Calamba |
|||||||
| Shindengen Electric Manufacturing[380] | Thailand, Lamphun |
|||||||
| NKK JFE Holdings[83] | 200 | 6000 | , | |||||
| New Japan Radio | Kawagoe Works | Japan, Saitama Prefecture, Fujimino City[381][382] |
1959[83] | 100, 150 | 4000, 400, 350 | Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,
SAW Filters[383] | ||
| New Japan Radio | Saga Electronics Archived 2017-09-19 at the Wayback Machine.[384] | Japan, Saga Prefecture |
100, 150 | 4000, 400, 350[385] | Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,
SAW Filters[383] | |||
| New Japan Radio | NJR FUKUOKA Archived 2017-09-18 at the Wayback Machine. | Japan, Fukuoka Prefecture, Fukuoka City[384] |
2003[386] | 100, 150 | Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs | |||
| New Japan Radio | Japan, Nagano, Nagano City[387] |
|||||||
| New Japan Radio | Japan, Nagano, Ueda City[387] |
|||||||
| Nichia | YOKOHAMA TECHNOLOGY CENTER[388] | Japan, KANAGAWA |
LEDs | |||||
| Nichia | SUWA TECHNOLOGY CENTER[388] | Japan, NAGANO |
LEDs | |||||
| Taiyo Yuden | Japan, Nagano |
SAW devices[162] | ||||||
| Taiyo Yuden | Japan, Ome |
SAW devices[162] | ||||||
| NMB SEMICONDUCTOR[83] | DRAM | |||||||
| Silex Microsystems | Sweden, Stockholm County, Järfälla[1] |
0.009, 0.032 | 2003, 2009[1] | |||||
| Elmos Semiconductor | Germany, North Rhine-Westphalia, Dortmund[389] |
1984 | 200 | 800, 350 | 9000 | HV-CMOS | ||
| United Monolithic Semiconductors[390] | Germany, Baden-Württemberg, Ulm |
100 | 700, 250, 150, 100 | Foundry, FEOL, MMIC, GaAs pHEMT, InGaP, GaN HEMT, MESFET, Schottky diode | ||||
| United Monolithic Semiconductors[390] | France, Île-de-France, Villebon-sur-Yvette |
100 | Foundry, BEOL | |||||
| Innovative Ion Implant | France, Provence-Alpes-Côte d'Azur, Peynier |
51–300[391] | ||||||
| Innovative Ion Implant | UK, Scotland, Bathgate |
51–300[391] | ||||||
| nanoPHAB | Netherlands, North Brabant, Eindhoven |
50–100 | 50-10 | 2–10 | MEMS | |||
| Micron Semiconductor Ltd.[392] | Lancing | UK, England, West Sussex, Lancing |
Detectors | |||||
| Pragmatic Semiconductor | FlexLogic 001 | UK, England, Durham |
0.020 | 2018 | 200 | 600 | 4,000 | Flexible Semiconductor /
Foundry and IDM |
| Pragmatic Semiconductor | FlexLogic 002 | UK, England, Durham |
0.050 | 2023 | 300 | 600 | 15,000 | Flexible Semiconductor /
Foundry and IDM |
| Pragmatic Semiconductor | FlexLogic 003 | UK, England, Durham |
0.050 | Planned 2025 on line | 300 | 600 | 15,000 | Flexible Semiconductor /
Foundry and IDM |
| INEX Microtechnology | UK, England, Northumberland, Newcastle upon Tyne |
2014 | 150 | Foundry | ||||
| CSTG | UK, Scotland, Glasgow[1][393] |
2003[1] | 76, 100 | InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry | ||||
| Photonix | UK, Scotland, Glasgow[1] |
0.011 | 2000[1] | |||||
| Integral | Belarus, Minsk |
1963 | 100, 150, 200 | 2000, 1500, 350 | ||||
| VSP Mikron | WaferFab[394] | Russia, Voronezh Oblast, Voronezh |
1959 | 100, 150 | 900+ | 6,000 | Bipolar, Power Semiconductors | |
| Semikron | Nbg Fab | Germany, Nuremberg |
1984 | 150 | 3500 | 70,000 | Bipolar, Power Semiconductors | |
| NM-Tech | Russia, Moscow, Zelenograd |
2016 | 200 | 250-110 | 20,000 | |||
| Angstrem | Liniya 100 | Russia, Moscow, Zelenograd |
1963 | 100 | 1200 | 500 (6,000 per year)[395] | ||
| Angstrem | Liniya 150 | Russia, Moscow, Zelenograd |
1963 | 150 | 600 | 6,000 (72,000 per year)[395] | ||
| Mikron Group | Mikron | Russia, Moscow, Zelenograd |
0.4[396] | 2012 | 200 150 100 |
250-65 2000-1600 |
3,000 8,000 5,000 |
|
| Crocus Nano Electronics | Russia, Moscow |
0.2 | 2016 | 300 | 90-55 | 4,000[397] | BEOL | |
| NIIIS | Russia, Nizhny Novgorod Oblast, Nizhny Novgorod |
2010 | 100–150 | 350-150 | MEMS | |||
| NPP Istok | Russia, Moscow Oblast, Fryazino |
150 | ||||||
| Micran | Russia, Tomsk Oblast, Tomsk |
2015 | 100 | |||||
| Kremny El | Russia, Bryansk Oblast, Bryansk |
2019 | 500 | |||||
| Syntez Microelectronics | Russia, Voronezh Oblast, Voronezh |
1992 | 200 | 350-65 | SiC, GaN, TSV | |||
| NZPP Vostok | Russia, Novosibirsk Oblast, Novosibirsk |
1956 | 100 | 250-180 | ||||
| Russian Space Systems | Russia, Moscow |
76, 100, 150 | 1000 | |||||
| Ruselectronics | Svetlana-Rost | Russia, Saint Petersburg |
50, 76, 100 | 1000, 800, 500, 200 | ||||
| OKB-Planeta | Svetlana-Rost | Russia, Novgorod Oblast, Veliky Novgorod |
100 | 150 | ||||
| FBK – Fondazione Bruno Kessler | MNF | Italy, Trento | 1990 | 500 | 150 | Research Institute; prototype productions of silicon MEMS, silicon radiation sensors |
Number of open fabs currently listed here: 493
(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)
Closed plants
[編集]| Company | Plant Name | Plant Location | Plant Cost (in US$ Billions) | Started Production | Wafer Size (mm) | Process Technology Node (nm) | Production Capacity (Wafers/Month) | Technology / Products | Ended Production |
|---|---|---|---|---|---|---|---|---|---|
| VEF | Soviet Union, Latvia, Riga |
1960 | Semi-secret government semiconductor fab and a major research center separated from the Russian military manufacturing complex by the collapse of the USSR. | 1999 | |||||
| Tower Semiconductor (formerly Micron) | Fab 4[398] | Japan, Hyōgo, Nishiwaki |
0.450[1] | 1992[1] | 200 | 95 | 60,000[1] | DRAM, foundry | 2014 |
| Tower Semiconductor – Tacoma | China, Jiangsu, Nanjing[399][400] |
halted, bankruptcy in June 2020[401] | 200, 300 (planned) | Foundry | 2020 | ||||
| Fujian Jinhua (JHICC)[18][402][403][404] | F2 | China, Fujian, Jinjiang |
5.65[405] | 2018 (planned) | 300 | 22 | 60,000 | DRAM[17] | 2018 |
| Decoma[18] | F2 | China, Jiangsu, Huai'an |
Template:Tba | 300 | 20,000 | 2020 | |||
| Wuhan Hongxin Semiconductor Manufacturing (HSMC)[406] | China, Hubei, Wuhan |
2019 (halted) | 300 | 14, 7 | 30,000[407] | Foundry | 2020 | ||
| Tsinghua Unigroup – Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.)[18] | SZ | China, Guangdong, Shenzhen |
12.5 | Planned | 300 | 50,000 | DRAM | 2019 (just plan) | |
| TSMC | Fab 1[241][149] | Taiwan Hsinchu, Baoshan |
1987 | 150 | 2000-800 | 20,000 | Foundry, CMOS, BiCMOS | 2001, March 9 | |
| UMC | Fab 1 | Japan, Chiba, Tateyama |
0.543[1] | 1997[1] | 200 | 40,000 | Foundry | 2012 | |
| SK Hynix | E-4 | United States, Oregon, Eugene |
1.3 | 2007 | 200 | 30,000 | DRAM | 2008[408] | |
| Symetrix – Panasonic[409] | Brazil | 0.9 (planned) | planned | FeRAM | (just plan) | ||||
| Rohm (formerly Data General) | United States, California, Sunnyvale[410] |
||||||||
| Kioxia | Fab 1 (at Yokkaichi Operations)[411] | Japan, Mie, Yokkaichi |
1992 | 200 | 400 | 35,000 | SRAM, DRAM | 2001, September | |
| NEC | Livingston[412][84] | United Kingdom, Scotland, West Lothian, Livingston |
4.5 (total) | 1981 | 150, 200 | 800–350, 250, 180 | 30,000 | CMOS, DRAM, SRAM, MCUs, ASICs, DSPs | 2001, April |
| LFoundry (formerly Renesas Electronics)[413] | Germany, Bavaria, Landshut |
1992 | 200 | 2011 | |||||
| LFoundry (formerly Atmel)[414] | France, Bouches-du-Rhône, Rousset |
? | 200 | 25.000[415] | |||||
| Atmel (formerly Siemens) | Fab 9[416] | United Kingdom, Tyne and Wear, North Tyneside |
1.53[417] | 1998[418] | DRAM[418] | 2007[419] | |||
| EI Niš | Ei Poluprovodnici | Serbia, Nišava, Niš |
1962 | 100 | 2000 | ||||
| Plessey Semiconductors (formerly Plus Semi) (formerly MHS Electronics) (formerly Zarlink) (formerly Mitel) (formerly Plessey Semiconductors) | [201] | UK, Wiltshire, Swindon[1] |
100, 150 | 800, 500 | 8,000 | Bipolar, ASICs, linear ICs | |||
| Telefunken Semiconductors | Heilbronn, HNO-Line[201] | Germany, Baden-Württemberg, Heilbronn |
0.125[1] | 1993[1] | 100, 150 | 800 | 10,000 | Bipolar, CMOS, BiCMOS, GaAs, SiGe, ASICs, ASSPs, MCUs, discrete, optoelectronics | 2015 |
| Qimonda | Richmond[420] | United States, Virginia, Richmond |
3 | 2005 | 300 | 65 | 38,000 | DRAM | 2009, January |
| STMicroelectronics (formerly Nortel[83]) | [201] | United States, California, San Diego, Rancho Bernardo |
100, 150 | 800, 500 | NMOS, CMOS, BiCMOS | 2002[421] | |||
| Freescale Semiconductor (formerly Motorola) | Toulouse Fab[422] | France, Haute-Garonne, Toulouse |
1969 | 150 | 650 | Automotive | 2012[423] | ||
| Freescale Semiconductor (formerly Motorola) (formerly Tohoku Semiconductor) | Sendai Fab[424] | Japan, Miyagi, Sendai |
1987 | 150, 200 | 500 | DRAM, microcontrollers, analog, sensors | 2009? | ||
| Agere Systems (formerly Lucent) (formerly AT&T)[425] | Spain, Madrid, Tres Cantos |
0.67[426] | 1987[427] | 500, 350, 300 | CMOS | 2001 | |||
| GMT Microelectronics (formerly Commodore Semiconductor) (formerly MOS Technology) | United States, Pennsylvania, Audubon |
1969 1976 1995 |
1000 | 1976 1992[428] 2001 | |||||
| Integrated Device Technology | United States, California, Salinas |
1985 | 150 | 800-350[154] | 2002 | ||||
| ON Semiconductor (formerly Cherry Semiconductor) | [429] | United States, Rhode Island, East Greenwich |
100, 150 | 1400 | 10,000 | Bipolar, BiCMOS, Linear ICs and ASICs | 2004 | ||
| ON Semiconductor (formerly Motorola) | [429] | United States, Arizona, Phoenix |
150 | 5000-500 | 12,000 | MOS, power discrete | 2011 | ||
| ON Semiconductor (formerly Motorola) | Aizu Plant[429] | Japan, Aizu |
100, 150 | 1200, 1000 | 40,000 | CMOS, MCUs, logic and smart power ICs | 2012 | ||
| ON Semiconductor (formerly Truesense Imaging, Kodak) | Rochester | United States, New York, Rochester[430] |
150 | CCDs and Image Sensors | 2020 | ||||
| Intel | Fab 8[59] | Israel, Jerusalem District, Jerusalem |
1985 | 150 | Microprocessors, Chipsets, Microcontrollers[60] | 2007 | |||
| Intel | Fab D2 | United States, California, Santa Clara |
1989 | 200 | 130 | 8,000 | Microprocessors, Chipsets, Flash memory | 2009 | |
| Intel | Fab 17[50][49] | United States, Massachusetts, Hudson |
1998 | 200 | 130 | Chipsets and other[49] | 2014 | ||
| Fairchild Semiconductor (formerly National Semiconductor) | West Jordan | United States, Utah, West Jordan |
1977 | 150 | 2015[431] | ||||
| Texas Instruments | HFAB | United States, Texas, Houston |
1967 | 150 | 2013[432] | ||||
| Texas Instruments (formerly Silicon Systems) | Santa Cruz | United States, California, Santa Cruz |
0.250 | 1980 | 150 | 800 | 80,000 | HDD | 2001 |
| Texas Instruments (formerly National Semiconductor) | Arlington | United States, Texas, Arlington |
1985 | 150 | 80000, 35000 | 2010 | |||
| Unknown (fortune 500 company) | United States, East Coast[433] |
150 | 1,600 | MEMS | 2016 | ||||
| Diodes Incorporated (formerly Lite-On Power Semiconductor) (formerly AT&T) | KFAB | United States, Missouri, Lee's Summit |
1994[434] | 130 | 2017[435] | ||||
| Qorvo (formerly TriQuint Semiconductor) (formerly Sawtek) | United States, Florida, Apopka[74][436] |
SAW filters | 2019 | ||||||
| GlobalFoundries | Abu Dhabi[1] | UAE, Emirate of Abu Dhabi, Abu Dhabi[1] |
6.8[1] (planned) | 2016[1] (planned) | 300 | 180-110 | 45,000 | Foundry | 2011 (plan stopped) |
| GlobalFoundries – Chengdu | China, Sichuan, Chengdu[437] |
10 (planned) | 2018 (planned), 2019 (second phase) | 300 | 180/130 (cancelled), 22 (second phase) | 20,000 (85,000 planned) | Foundry, FDSOI (second phase) | 2020 (was idle) | |
| Tondi Elektroonika[438] | A-1381 | Soviet Union, Estonia, Harju, Tallinn |
1958 | Radio equipment, Transisors, Photodiode | 1978 | ||||
| Intersil (formerly Harris Semiconductor, formerly GE, formerly RCA) | [429] | United States, Ohio, Findlay |
1954 | 100, 125 | 2000, 1500, 1200 | 60,000 | CMOS, bipolar, BiCMOS, Semiconductors, Optoelectronics, Integrated Circuits, Research[439] | 2003[440] |
Number of closed fabs currently listed here: 46
関連項目
[編集]- List of Intel manufacturing sites
- List of integrated circuit manufacturers
- Semiconductor device fabrication
脚注・参考文献
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Samsung capacity
外部リンク
[編集]- Memory and Foundry Account For More Than Half of Worldwide IC Capacity // IC Insights, Global Semiconductor Alliance, 2013-07-09
- SEMI World Fab Forecast 2013 // SEMI, 2013
- Worldwide Location of Wafer Fabs – Interactive Map
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